Developing EUV lithography, however ... a high-reflectivity ellipsoidal molybdenum–silicon multilayer mirror collects and focuses the light from the plasma. As well as maximizing the power ...
Extreme-ultraviolet (EUV) lithography at 13.5 nm is expected ... This radiation is focused using high-quality zone plates and multilayer optics onto a back-illuminated CCD camera.
LLNL maintains that this could lead to a next-generation “beyond EUV” (BEUV) lithography system producing chips that are smaller, more powerful, and faster to manufacture while using less electricity.