We recently demonstrated world-record RF power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2 μm gate length ...
A chemically driven process turns the classic insulator, gallium oxide, into a metal by the formation of a heterogeneous mixture of crystalline and amorphous regions. Phenomenologically, ...
Here, we focus on monoclinic beta gallium oxide (β-Ga2O3) with an ultra-wide bandgap of 4.6-4.9 eV, which has been identified as a promising contender for the next generation naval power electronics ...
Environmental systems scientist at the University of Delaware. Gallium metal has the unusual property of melting at room temperature and is often used as a curiosity prop in chemistry exhibitions.
Their approach, outlined in a paper published in Nature Electronics, was successfully used to deposit an ultrathin and uniform native oxide of gallium Ga 2 O 3 on the surface of MoS 2.
Gallium and germanium, indispensable for advanced Western technologies, are largely sourced from China. Beijing’s imposition of export controls on these elements has made Western firms nervous ...
The review uncovered up to 124g/t Ga2O3 (gallium oxide) with thick profiles from surface up to 45m, which is associated with high grade REE. Just some of the high-grade surface results include ...