What is claimed to be the industry’s first 1,700V GaN transistor has been announced. Steve Bush interviews Andy Smith, ...

氮化镓（GaN）材料因其禁带宽度大、电子饱和漂移速度高、击穿电场高、热导率高等优点，在高温、高压、大功率、微波器件等领域展现出巨大的发展潜力。近日，山东大学新一代半导体材料研究院崔鹏教授、韩吉胜教授团队研发出一种具有晶态氮化硅（SiN）帽层的新型Ga ...

As with all of Guerrilla RF's bare die offerings, each device is 100% DC production tested to ensure KGD (known good die) ...

The Vermont Gallium Nitride Tech Hub, led by UVM and including GlobalFoundries and the State of Vermont, received $23.7 ...

Manufacturers are investing in research and development endeavors to push the boundaries of GaN technology, unlocking new applications and functionalities. From power transistors to RF amplifiers, GaN ...

A group led by Matteo Meneghini, associate professor at the University of Padova, combined lateral GaN HEMTs with vertical SiC transistors. Here, the GaN devices allow fast switching at relatively low ...

Researchers at Osaka University have demonstrated that low-temperature post-deposition annealing slashes the density of hole ...

Electronics designers are moving away from conventional Si-based power electronics and towards wide-bandgap solutions.

Toyoda Gosei’s (TOKYO:7282) technology to enhance GaN substrates has been verified to improve power device performance. An ...

QPT developed this new, qAttach process for use with the Gallium Nitride (GaN) transistors that it uses in its electric motor control designs to enable them to handle the huge amounts of waste ...