Electronics Weekly7d
First full wafer-scale fabrication of electrically-pumped GaAs-based nano-ridge lasers on 300 mm silicon wafers
Imec has demonstrated electrically-driven GaAs-based multi-quantum-well nano-ridge laser diodes fully, monolithically fabricated on 300 mm silicon wafers in its CMOS pilot prototyping line. Achieving ...
Tech Xplore on MSN7d
Imec makes breakthrough with GaAs lasers on silicon
Belgian research organisation Imec has announced a significant milestone in silicon photonics with the successful ...
Optics8d
imec makes silicon photonics laser ‘breakthrough’ on 300 mm wafers
Bernardette Kunert, scientific director at imec, commented, “Over the past years, imec has pioneered nano-ridge engineering, a technique that builds on SAG and ART to grow low-defectivity III-V ...
Compoundsemiconductor.net6d
III-V Epi advocates GaAs for new lasers
Richard Hogg, chief technical officer of UK-based company III-V Epi, is advocating using GaAs epitaxial regrowth for many ...