facility and process requirements within the laboratory and pilot line production environments. The Orion III has many standard features not typically found on a system so reasonably priced, which is ...
The ICP CVD process module has been developed to produce high-quality films from room temperature to 400 °C with high-density plasmas at low deposition temperatures and pressures. The PECVD process ...
process, and a 20-nm thick hydrogenated a-SiO x layer from the PECVD process. “Silane (SiH 4), carbon dioxide (CO 2), and hydrogen (H 2) gases are used as the sources to deposit these poly-SiO x ...
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