The SiC substrate sector has quickly shifted from shortage to oversupply in 2024, thanks to aggressive expansions of 6-inch capacity at Chinese suppliers. Save my User ID and Password Some ...

The significant expansion of Chinese manufacturers' SiC substrate production capacity in 2024 has led to oversupply and a sharp decline in prices, rapidly expanding the applicable market and ...

New tool increases yield by optimising temperature measurement and control US-based CVD Equipment Corporation has introduced Dynamic Hotzone Temperature Control (DHTC ) to address SiC crystal growth ...

Porous SiC ceramic were prepared with silicon carbide powder as the aggregate, silicone resin as the binder and pore agent by the process of mixing, iso-static pressure molding, and calcination. The ...

To fill this gap, Resonac Corporation and Soitec have recently entered into an agreement to develop 200mm (8-inch) SmartSiC SiC wafers utilizing Resonac substrates and epitaxy processes. This ...

The two companies plan to jointly develop 200mm silicon carbide SiC bonded substrates, which will serve as the basic material for SiC epitaxial wafers used in fabricating power semiconductors. By ...