YouTube filed a lawsuit against Ganjingworld, which operates the Gan Jing World video-sharing site, alleging that it has been “automatically vacuuming up YouTube user channels and associated con ...
EasyGaN’s technology can also be used to regrow Ohmic ... channel HEMTs for power electronics, targeting ultra-wide bandgap applications with high breakdown voltages (figure 3). EasyGaN is a pure ...
In 2023, Rohm incorporated TSMC's 650V GaN high-electron mobility transistors (HEMTs) into its EcoGaN™ series, which has been successfully implemented in products such as Delta Electronics ...
proudly announces the successful development and deployment of its proprietary low-noise cryogenic High Electron Mobility Transistor (HEMT) amplifiers. These state-of-the-art amplifiers play a ...
Finally, the contribution of this work is to generate an accurate electrothermal model of a Two-level Buck Converter based on GaN-HEMT technology transistors to enable active thermal control (ATC) ...
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Abstract: This article presents a pioneering study on the pH sensing performance of open-gated gallium nitride (GaN) high-electron mobility transistors (HEMTs) with five different device variants, ...
“GaN devices are natively depletion mode (normally-on), and a cascode configuration and several ‘mature’ techniques are being used to design GaN power devices enhancement mode (normally-off), which is ...
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