The review uncovered up to 124g/t Ga2O3 (gallium oxide) with thick profiles from surface up to 45m, which is associated with high grade REE. Just some of the high-grade surface results include ...
In particular it forms a sort of alum not to be distinguished in its appearance from ordinary alum, but containing oxide of gallium instead of oxide of aluminum or alumina. • But the chief ...
Abstract: The vertical channel-all-around (CAA) field-effect transistor (FET) based on indium-gallium-zinc-oxide (IGZO) shows great promise for applications in novel dynamic random access memory ...