GlobalFoundries (GF) has been awarded an additional $9.5 million in US federal government funding to advance the manufacturing of gallium nitride-on-silicon (GaN-on-Si) chips at its fab in Essex ...
a Chinese maker of gallium-nitride-on-silicon (GaN-on-Si) power chips, infringed upon a patent of American rival Efficient Power Conversion Corp (EPC), clouding the Suzhou-based firm's prospects ...
GaNrich Semiconductor, a compound semiconductor manufacturer, has begun mass production of gallium nitride (GaN) power ...
SiC and GaN are promising alternatives, with much larger band gaps and breakdown voltages, as much as 10 times larger than ...
Minority carrier injection and conductivity modulation are essential for achieving high surge current in bipolar devices, ...
GlobalFoundries (GF) has received an additional $9.5 million in federal funding from the US government to advance the manufacturing of GF’s essential gallium nitride (GaN) on silicon semiconductors.
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