Electronics designers are moving away from conventional Si-based power electronics and towards wide-bandgap solutions.

As with all of Guerrilla RF's bare die offerings, each device is 100% DC production tested to ensure KGD (known good die) ...

The Vermont Gallium Nitride Tech Hub, led by UVM and including GlobalFoundries and the State of Vermont, received $23.7 ...

Preparing to offer just that in significant volume within the next few years is the Israeli-based producer of GaN power ...

The simultaneous growth of large quantities of GaN crystals achieved using the ammonothermal method can also reduce ...

Abstract: In this paper, the damage effect and mechanism of p-type GaN (p-GaN) high electron mobility transistor are studied under high intensity radiated field environment. The Sentaurus Technology ...

Smartkem (Nasdaq: SMTK), which is seeking to change the world of electronics using its disruptive organic thin-film ...

Toyoda Gosei’s (TOKYO:7282) technology to enhance GaN substrates has been verified to improve power device performance. An ...