First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs ...

The Vermont Gallium Nitride Tech Hub, led by UVM and including GlobalFoundries and the State of Vermont, received $23.7 ...

A flyback with a GaN switch offers higher efficiency across all metrics versus silicon—and it’s simpler to design. Enter the ...

A group led by Matteo Meneghini, associate professor at the University of Padova, combined lateral GaN HEMTs with vertical SiC transistors. Here, the GaN devices allow fast switching at relatively low ...

Researchers at Osaka University have demonstrated that low-temperature post-deposition annealing slashes the density of hole ...

Toyoda Gosei’s (TOKYO:7282) technology to enhance GaN substrates has been verified to improve power device performance. An ...

Manufacturers are investing in research and development endeavors to push the boundaries of GaN technology, unlocking new applications and functionalities. From power transistors to RF amplifiers, GaN ...

'ZDNET Recommends': What exactly does it mean? ZDNET's recommendations are based on many hours of testing, research, and comparison shopping. We gather data from the best available sources ...

Infineon Technologies, STMicroelectronics, ROHM and Nexperia have become high-volume GaN transistor manufacturers but there is now a growing number of new entrants into the market. Recently, Infineon ...

氮化镓（GaN）材料因其禁带宽度大、电子饱和漂移速度高、击穿电场高、热导率高等优点，在高温、高压、大功率、微波器件等领域展现出巨大的发展潜力。近日，山东大学新一代半导体材料研究院崔鹏教授、韩吉胜教授团队研发出一种具有晶态氮化硅（SiN）帽层的新型Ga ...

This can be overcome by connecting the D-mode GaN high electron mobility transistor (HEMT) in series with a low-voltage silicon MOSFET in the cascoded D-mode GaN structure. The gate of the HEMT is ...