The two companies plan to jointly develop 200mm silicon carbide SiC bonded substrates, which will serve as the basic material for SiC epitaxial wafers used in fabricating power semiconductors. By ...
ASM International presents the PE2O8 silicon carbide epitaxy system. This dual chamber, single wafer system accommodates both 6” and 8” substrates, providing increased throughput and reduced cost of ...
New tool increases yield by optimising temperature measurement and control US-based CVD Equipment Corporation has introduced Dynamic Hotzone Temperature Control (DHTC ) to address SiC crystal growth ...