6264 - Wikipedia
It is available in a variety of different configurations, such as DIP, SPDIP, and SOIC. Some versions of the 6264 can run in ultra-low-power mode and retain memory when not in use, thus making them suitable for battery backup applications.
存储芯片引脚和时序：SRAM（HY6264A系列） - CSDN博客
HY6264A是Hyundai（Hynix前身）生产的一款高速低功耗CMOS SRAM。 容量：8192 x 8bit，即 8K x 8bit。 本文内容整理翻译自DataSheet。 H高电平，L低电平，Z高阻态，X任意. 片选持续有效的情况： 一个周期内，一块 HY6264A 只能读出或者写入一个 字 的数据，即 8bit。 (注意这里的“字”是存储字的“字”，通常，存储字长取决于引脚数。 并行 访问存储器一个周期可以读多个存储字。 文章浏览阅读5.5k次，点赞7次，收藏17次。 文章目录1、引脚与功能2、真值表3、读周期 …
6264 RAM INTEGRATED CIRCUITS - bafnadevices
The 6264 is a JEDEC-standard static RAM integrated circuit. It has a capacity of 64 Kbit (8 KB). It is produced by a wide variety of different vendors, including Hitachi, Hynix, and Cypress …
Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability. This device meets JEDEC standards for functionality and pinout, and is avail - able in plastic dual–in–line and plastic small–outline J–leaded packages.
The Hitachi HM6264B is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, 300 mil plastic DIP, is available for high density mounting. Features.
HM6264 Datasheet (PDF) - Hitachi Semiconductor
The Hitachi HM6264B is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, 300 mil plastic DIP, is available for high density mounting. Features • High speed
The KM6264B family is fabricated by SAMSUNG's advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operations with low data retention current. PRODUCT FAMILY.
8086内存扩展-CSDN博客
本文详细介绍如何使用2764和6264芯片在8086最小模式下扩展64KB ROM和64KB RAM的方法。 包括所需芯片数量、地址范围划分及译码电路的设计等内容。
SRAM6264芯片 - 知乎 - 知乎专栏
13位地址信号线，可产生8K个 地址编码。 13根地址信号经过芯片内部译码可以选中6264芯片中唯一存储单元。 在与系统总线相连时，通常一一对应接入系统 地址总线 低13位。 D0~D7: 8根双向数据线。 CS1（非），CS2: 片选信号，CS1（非）=0，CS2=1时该芯片被选中，系统地址总线高位地址线A13~A19和控制信号译码产生片选信号。 OE（非）: 输出允许信号，其为低电平时，（且WE（非）为高电平时）CPU才能从芯片中读出数据。 WE（非）: 写允许信号，其为低电平 …
6264芯片引脚图和内部结构图 - 电子发烧友网
6264是一种8k×8的静态存储器，其内部组成如图2．5（a）所示，主要包括512×128的存储器矩阵、行／列地址译码器以及数据输入输出控制逻辑电路。地址线13位，其中a12～a3用于行地址译码，a2～a0和a10用于列地址译码。