PPT - Molecular Beam Epitaxy PowerPoint Presentation, free download - ID:308474

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Epitaxy

Epitaxy

A molecular-beam epitaxy system contains separate Al and As effusion evaporation sources of 4  cm^2 area, located 10  cm from a (100) GaAs substrate. The Al source is heated to 1000^∘ C, and the As source is heated to 300^∘ C. What is the growth rate of the AlAs film in Ȧ / sec ? [ Note: AlAs basically has the same crystal structure and lattice parameter (5.661 A) as GaAs.] | Numerade

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